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Creators/Authors contains: "Chinnathambi, Karthik"

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  1. Wafer scale transition metal dichalcogenide films grown by MOCVD using two different chalcogen precursors are assessed for layer homogeneity and quality. These characteristics are then compared to electrical properties on the growth substrate. 
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  2. Abstract Lightweight energy storage devices are essential for developing compact wearable and distributed electronics, and additive manufacturing offers a scalable, low‐cost approach to fabricating such devices with complex geometries. However, additive manufacturing of high‐performance, on‐demand energy storage devices remains challenging due to the need for stable, multifunctional nanomaterial inks. Herein, the development of 2‐dimensional (2D) titanium carbide (Ti3C2TxMXene) ink that is compatible with aerosol jet printing for energy storage applications is demonstrated. The developed MXene ink demonstrates long‐term chemical and physical stability, ensuring consistent printability and achieving high‐resolution prints (≈45 µm width lines) with minimal overspray. The high‐resolution aerosol‐jet printed MXene supercapacitor achieves an areal capacitance of 122 mF cm−2and a volumetric capacitance of 611 F cm−3, placing them among the highest‐performing printed supercapacitors reported to date. These findings highlight the potential of aerosol jet printing with MXene inks for on‐demand, scalable, and cost‐effective fabrication of printed electronic and electrochemical devices. 
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  3. Abstract Printed electronics have made remarkable progress in recent years and inkjet printing (IJP) has emerged as one of the leading methods for fabricating printed electronic devices. However, challenges such as nozzle clogging, and strict ink formulation constraints have limited their widespread use. To address this issue, a novel nozzle‐free printing technology is explored, which is enabled by laser‐generated focused ultrasound, as a potential alternative printing modality called Shock‐wave Jet Printing (SJP). Specifically, the performance of SJP‐printed and IJP‐printed bottom‐gated carbon nanotube (CNT) thin film transistors (TFTs) is compared. While IJP required ten print passes to achieve fully functional devices with channel dimensions ranging from tens to hundreds of micrometers, SJP achieved comparable performance with just a single pass. For optimized devices, SJP demonstrated six times higher maximum mobility than IJP‐printed devices. Furthermore, the advantages of nozzle‐free printing are evident, as SJP successfully printed stored and unsonicated inks, delivering moderate electrical performance, whereas IJP suffered from nozzle clogging due to CNT agglomeration. Moreover, SJP can print significantly longer CNTs, spanning the entire range of tube lengths of commercially available CNT ink. The findings from this study contribute to the advancement of nanomaterial printing, ink formulation, and the development of cost‐effective printable electronics. 
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